Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-04-10
2007-04-10
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S713000, C438S714000, C438S719000
Reexamination Certificate
active
11002453
ABSTRACT:
A method of micro-machining a semiconductor substrate to form through slots therein and substrates made by the method. The method includes providing a dry etching chamber having a platen for holding a semiconductor substrate. During an etching cycle of a dry etch process for the semiconductor substrate, a source power is decreased, a chamber pressure is decreased from a first pressure to a second pressure, and a platen power is increased from a first power to a second power. Through slots in the substrate provided by the method can have a reentrant profile for fluid flow therethrough.
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Krawczyk John W.
McNees Andrew L.
Warner Richard L.
Lexmark International Inc.
Luedeka Neely & Graham
Norton Nadine G.
Tran Binh X.
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