Micro-etching method to replicate alignment marks for...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S748000, C257SE21224, C257SE21228

Reexamination Certificate

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07338909

ABSTRACT:
A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.

REFERENCES:
patent: 5271798 (1993-12-01), Sandhu et al.
patent: 6375792 (2002-04-01), Dow et al.
patent: 6746966 (2004-06-01), Chang et al.
patent: 396402 (1987-10-01), None

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