Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1997-12-29
1999-09-28
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257415, H01L 2982
Patent
active
059593385
ABSTRACT:
A relay device build using MEMS technology and having a semiconductor wafer base with a surface depression having a first electrically conductive surface pattern. A lower diaphragm is moveably positioned above the depression for contact and has a second electrically conductive surface pattern thereon. An upper diaphragm is positioned above the lower diaphragm, with a central electrode mounted between them to selectively attract and move a diaphragm upon application of voltage. A post connects the upper and lower diaphragms to move a diaphragm when the other is moved electrostatically. The diaphragms define a sealed region enclosing the central electrode. The surface patterns may be tapered at their perimiters to provide a contact contour allowing gradually increasing contact as the diaphragm moves toward the surface. The preferred wafer is a silicon wafer, and the diaphragms are polysilicon. The patterns are formed from highly conductive material like gold, while the outer regions are a high resistive, chemically stable material like CrsiN. The sealed region is evacuated to have a vacuum, or may be filed with an inert gas. In a preferrred embodiment, the sealed region is filled with a fluid having a measurable viscosity, and region is adapted to move the fluid upon electrostatic movement of the diaphragm, such that the viscosity of the fluid is selected to adjust the rate of movement of the diaphragm.
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Johnson Burgess R.
Youngner Daniel W.
Honeywell Inc.
Meier Stephen D.
Norris Roland W.
Shudy Jr. John G.
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