Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-04-05
2011-12-06
Li, Meiya (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C257S254000, C257S415000, C257S419000, C438S022000, C438S024000, C438S048000, C438S052000, C438S053000, C216S002000, C216S011000, C216S075000, C216S079000, C381S174000, C073S066000, C073S464000, C073S514220, C073S570000, C073S574000, C073S575000, C073S584000, C073S777000, C073S780000
Reexamination Certificate
active
08071413
ABSTRACT:
The present invention discloses an MEMS sensor and a method for making the MEMS sensor. The MEMS sensor according to the present invention includes: a substrate including an opening; a suspended structure located above the opening; and an upper structure, a portion of which is at least partially separated from a portion of the suspended structure; wherein the suspended structure and the upper structure are separated from each other by a step including metal etch.
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Li Meiya
PixArt Imaging Incorporation, R.O.C.
Tung & Associates
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