Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-11-07
2006-11-07
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S602000, C310S319000, C361S283300
Reexamination Certificate
active
07132723
ABSTRACT:
A radio frequency (RF) micro electro-mechanical system (MEMS) device and method of making same are provided, the device including an RF circuit substrate and an RF conducting path disposed on the RF circuit substrate, a piezoelectric thin film actuator, and a conducting path electrode. The piezoelectric thin film actuator has a proximal end that is fixed relative to the RF circuit substrate and a cantilever end that is spaced from the RF circuit substrate. The conducting path electrode is disposed on the cantilever end of the piezoelectric thin film actuator. The cantilever end of the piezoelectric thin film actuator is movable between a first position whereat the conducting path electrode is spaced from the RF path electrode and a second position whereat the conducting path electrode is spaced from the RF path electrode a second distance, wherein the second distance is less than the first distance. The RF MEMS device is particularly useful as a tunable capacitor. The RF MEMS device requires lower operating voltage, and provides variable RF tuning capacity, fewer stiction problems, simplified fabrication, and an improved switching time.
REFERENCES:
patent: 2708244 (1955-05-01), Jaffe
patent: 4342936 (1982-08-01), Marcus et al.
patent: 4868448 (1989-09-01), Kornrumpf
patent: 5536963 (1996-07-01), Polla
patent: 2002/0050882 (2002-05-01), Hyman et al.
patent: 2002/0096421 (2002-07-01), Cohn et al.
patent: 2004/0075366 (2004-04-01), Mehta
patent: 2005/0151444 (2005-07-01), Mehta
patent: 2353410 (2001-02-01), None
Jae Y. Park et al., “Micromachined RF MEMS Tunable Capacitors Using Piezoelectric Actuators”, Microwave Symposium Digest, 2001 IEEE MTT-S International, pp. 2111-2114, vol. 3, May 25, 2001.
WO 01/13457 A (Lane Anthony Alan; Marconi Caswell LTD (GB); Needham Anthony Patrick) Feb. 22, 2001, p. 7, line 1—p. 10, line 19; claim 2; figures 1-6.
Park, J.Y., et al, Institute of Electrical and Electronics Engineers: “Micromachined RF MEMS Unable Capacitors Using Piezoelectric Actuators,” XP001061195, ISBN: 0-7803-6538-0, p. 2111, p. 2112; figures 1,2.
Patent Abstracts of Japan, Publication No. 2002170470, publication date Jun. 14, 2002, Application No. 2000361975, application date: Nov. 28, 2000, applicant: Matsushita Electric Works Ltd.
Allison Robert C.
Nakahira Ron K.
Park Joon
Alkov Leonard A.
Dickey Thomas L.
Gunther John E.
Raytheon Company
Vick Karl A.
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