Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-08-23
2011-08-23
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S667000, C438S050000, C438S052000
Reexamination Certificate
active
08003422
ABSTRACT:
According to the present invention, a micro-electro-mechanical system (MEMS) device comprises: a thin film structure including at least a metal layer and a protection layer deposited in any order; and a protrusion connected under the thin film structure. A preferred thin film structure includes at least a lower protection layer, a metal layer and an upper protection layer. The MEMS device for example is a capacitive MEMS acoustical sensor.
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patent: 7190038 (2007-03-01), Dehe et al.
patent: 2007/0114622 (2007-05-01), Adkisson et al.
“Development of New Generation Microphone” China Academic Journal Electronic Publishing House.
Lee Sheng Ta
Wang Chuan Wei
Landau Matthew
McCall Shepard Sonya
Pixart Imaging Corporation
Tung & Associates
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