Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1998-12-11
2000-05-09
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
438 52, 438 53, 438725, 257417, 216 2, H01L 2100, H01L 21302, H01L 21461, H01L 2982, B24B 100
Patent
active
060603364
ABSTRACT:
A micro-electro-mechanical device and method of manufacture therefore with a suspended structure formed from mono-crystalline silicon, bonded to a substrate wafer with an organic adhesive layer serving as support and spacer and the rest of the organic adhesive layer serving as a sacrificial layer, which is removed by a dry etch means. Said substrate wafer may contain integrated circuits for sensing and controlling the device.
REFERENCES:
patent: 3626256 (1971-12-01), Brown
patent: 5314572 (1994-05-01), Core et al.
patent: 5576250 (1996-11-01), Diem et al.
patent: 5710057 (1998-01-01), Kenney
patent: 5725729 (1998-03-01), Greiff
patent: 5780885 (1998-07-01), Diem
Berezny Nema
Bowers Charles
C.F. Wan Incorporated
Finn James S.
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