Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2002-08-07
2009-06-02
Cao, Phat X (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S052000
Reexamination Certificate
active
07541214
ABSTRACT:
The present invention is related to a method for manufacturing micro-electro-mechanical systems (MEMS) having movable and stationary suspended structures formed from mono-crystalline silicon wafer or chip, bonded to a substrate wafer with an polymer adhesive layer that serves as spacer and as a sacrificial layer which is undercut by dry etch means. The substrate wafer contains electronic circuits for sensing and actuating the suspended structure by electrical means. Electrical interconnections between the suspended structures and the substrate can be made by etching through via holes in the suspended structure and the adhesive, depositing metal layers in the via holes, and removing the metal layers from outside the via holes. The metal layers in the via holes can also be used as pillars for supporting the suspended structures. This method can be used to manufacture inertial sensors.
REFERENCES:
patent: 4262399 (1981-04-01), Cady
patent: 6060336 (2000-05-01), Wan
Cao Phat X
Wan Chang-Feng
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