Micro contact pin structure with a piezoelectric element and pro

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

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Details

257420, 257796, 257635, 438 14, 438 50, H01L 2358, H01L 2982, H01L 2348, H01L 2352

Patent

active

060721901

ABSTRACT:
A micro contact structure and a probe card to be used in testing performance of a semiconductor integrated circuit device formed on a semiconductor wafer have improved contact characteristics. The contact structure includes a micro contact pin having electric conductivity formed on one end of a beam which is movable in a vertical direction, and a piezoelectric element formed on the beam to drive the beam in the vertical direction. The beam is made of silicon on the surface of which is formed of a conductive thin film, and the micro contact pin has a pyramid shape. The piezoelectric element is a bimorph plate mounted on an upper surface of the beam or both upper and lower surfaces of the beam.

REFERENCES:
patent: 4994735 (1991-02-01), Leedy
patent: 5454146 (1995-10-01), Yagi et al.
patent: 5536963 (1996-07-01), Polla
patent: 5723894 (1998-03-01), Ueno et al.

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