Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-05
1998-06-09
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257202, 257208, 257296, 257300, 257309, 257503, 257532, 257905, 257908, 257909, H01L 27108
Patent
active
057639116
ABSTRACT:
A capacitor optimized for use in an implantable medical device such as an implantable defibrillator is disclosed. In its simplest form, the capacitor comprises a thin planar dielectric sheet that has an array of cells open to one or both sides. Metallization is applied to the surface of the cells such that the walls of adjacent cells form a capacitor with the wall that separates the cells serving as the dielectric. The metallization pattern that forms the electrical connection to the cells may be patterned to limit the allowable current flow to each individual cell, thereby providing a fuse in the case of local dielectric failure.
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"HDP-CVD: Trying to Lasso Lightning", Korczynski, Solid State Technology, Apr. 1996, pp. 63-73.
"Options for Multilevel Metallization", Butler, Solid State Technology, Mar. 1996, pp. S7-S10.
"Ion Bombardment Texturing of Surfaces: Technological Applications and Importance in Experimental Techniques", Ion Bombardment Modification of Surfaces, Fundamentals and Applications, Auciello, et al., 1984, pp. 435-466.
"Siko--A New Capacitor Technology Based on Porous Silicon", Lehmann, et al., 16th Capacitor and Resistor Technology Symposium, Mar. 11-15, 1996, pp. 126-130.
"A New Capacitor for Technology Based on Porous Silicon", Lehmann, et al., Solid State Technology, Nov. 1995, pp. 99-102.
Matthews M. Dean
Pless Benjamin D.
Bush M. Elizabeth
Martin Wallace Valencia
Mitchell Steven M.
Pacesetter Inc.
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