Methods to resolve hard-to-erase condition in charge...

Details Methods to resolve hard-to-erase condition in charge... Methods to resolve hard-to-erase condition in charge...

2007-07-10

2007-07-10

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185300, C365S185280

Reexamination Certificate

active

11359044

ABSTRACT:
A method for operating a nitride trapping memory cell is provided to resolve hard-to-erase condition by employing a reset technique to eliminate or reduce the number of electrons in the middle of a junction region. When a hard-to-erase condition is detected after a series of program and erase cycles, such as 500 or 100 program and erase cycles, a substrate transient hot hole (STHH) reset operation is applied. The substrate transient hot hole reset injects holes that are far away junction than band-to-band tunneling hot hole (BTBTHH) injection such that the STHH reset on cycle endurance is able to maintain a desirable cycle window to eliminate or reduce the hard-to erase condition in subsequent program and erase cycles.

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