Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2011-06-21
2011-06-21
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S790000, C257S040000, C257SE21277, C427S488000, C427S489000, C427S503000, C427S515000
Reexamination Certificate
active
07964442
ABSTRACT:
The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.
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Liu Yijun
M'Saad Hichem
Witty Derek R.
Xia Li-Qun
Xu Huiwen
Applied Materials Inc.
Landau Matthew C
Patterson & Sheridan L.L.P.
Snow Colleen E
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