Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Reexamination Certificate
2007-03-13
2007-03-13
Allen, Stephone B. (Department: 2878)
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
C250S208100, C257S432000
Reexamination Certificate
active
10906604
ABSTRACT:
Described is a light-directing feature formed in the inter-level dielectric (ILD) layer in combination with an anti-reflective (AR) layer to effectively and simultaneously increase quantum efficiency and cross-talk immunity thereby improving photonic performances of photo-sensitive integrated circuits. A plurality of photosensor cells is formed on a semiconductor substrate. An AR layer is subsequently formed on the plurality of photosensor cells, the AR layer being substantially non-reflective of incident light. An ILD layer is then formed over the AR layer, the ILD layer comprising a plurality of light-directing features formed in openings in the ILD layer over the AR layer above and about certain of the plurality of photosensor cells.
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Chen Jieh-Jang
Fu Shih-Chi
Kuo Ching-Sen
Lin Kuo-Yin
Liu Yuan-Hung
Allen Stephone B.
Baker & McKenzie LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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