Methods to form oxide-filled trenches

Details Methods to form oxide-filled trenches Methods to form oxide-filled trenches

2007-02-27

2007-02-27

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S680000, C438S770000, C257SE21008, C257S548000, C257S559000

Reexamination Certificate

active

11132000

ABSTRACT:
A thermal oxidation process is used to fill trenches with an oxide; however, the oxidation process consumes some of the silicon. The embodiments herein advantageously apply this tendency for the oxidation process to consume silicon so as to convert all the silicon substrate material between the multiple trenches into an oxide. Therefore, because all of the silicon between the multiple trenches is consumed by the oxidation process, the multiple smaller trenches are combined into a single larger trench filled with the oxide.

REFERENCES:
patent: 5814547 (1998-09-01), Chang
patent: 6716661 (2004-04-01), Zou et al.
patent: 2003/0143817 (2003-07-01), Ho et al.
patent: 2003/0143852 (2003-07-01), En-Ho et al.
patent: 2004/0121532 (2004-06-01), Seo
patent: 2005/0012158 (2005-01-01), Gonzalez et al.

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