Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-14
2011-06-14
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S204000, C257S351000, C257S371000, C257SE27062
Reexamination Certificate
active
07960802
ABSTRACT:
A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.
REFERENCES:
patent: 7612422 (2009-11-01), Chambers et al.
patent: 2004/0106261 (2004-06-01), Huotari et al.
patent: 2005/0104112 (2005-05-01), Haukka et al.
U.S. Appl. No. 12/275,812, filed Nov. 21, 2008 by Chambers et al.
Chambers et al., Metal Gate Electrode Impurity Engineering for Control of Effective Work Function, Presentation, Aug. 24, 2009, Dallas, USA.
Chambers James Joseph
Niimi Hiroaki
Brady III Wade J.
Garner Jacqueline J.
Louie Wai-Sing
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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