Methods, structures, and devices for reducing operational...

Details Methods, structures, and devices for reducing operational... Methods, structures, and devices for reducing operational...

2009-06-08

2011-10-04

Sofocleous, Alexander (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S157000

Reexamination Certificate

active

08031518

ABSTRACT:
Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.

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