Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-05-03
2005-05-03
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S185180, C365S189011
Reexamination Certificate
active
06888738
ABSTRACT:
Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.
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Huber Brian W.
Salling Craig T.
Leffert Jay & Polglaze PA
Micro)n Technology, Inc.
Nguyen Van Thu
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