Methods of trench and contact formation in memory cells

Details Methods of trench and contact formation in memory cells Methods of trench and contact formation in memory cells

2008-09-16

2010-02-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

43, 43, 43, 43

Reexamination Certificate

active

07666784

ABSTRACT:
Methods of contact formation and memory arrays formed using such methods, which methods include providing a substrate having a contacting area; forming a plurality of line-shape structures extending in a first direction; forming a hard mask spacer beside the line-shape structure; forming an insulating material layer above the hard mask spacer; forming a contiguous trench in the insulating material layer extending in a second direction different from the first direction and exposing the contacting area; and forming a conductive line in the trench to contact the contacting area.

REFERENCES:
patent: 4630357 (1986-12-01), Rogers et al.
patent: 5838615 (1998-11-01), Kamiya et al.
patent: 6638811 (2003-10-01), Saito et al.

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