Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
1999-02-16
2001-05-22
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Electron emitter manufacture
C445S024000, C445S046000, C445S049000, C445S050000, C445S058000
Reexamination Certificate
active
06235545
ABSTRACT:
TECHNICAL FIELD
The invention pertains to methods of treating substantially upright silicon-comprising structures, such as, for example, methods of treating silicon-comprising emitter structures. In particular aspects, the invention pertains to methods of forming field emission display devices. In other particular aspects, the invention pertains to cathode assemblies.
BACKGROUND OF THE INVENTION
Silicon-comprising field emitters are currently being designed and incorporated into field emission display devices, and show promise as candidates for electron sources in vacuum microelectronic devices. It is generally desirable to fabricate the emitters to have tips that are as sharp as possible, as such can improve control of electron emission from the tips. For instance, clarity, or resolution, of a field emission display is a function of, among other things, emitter tip sharpness. As sharper emitter tips can produce higher resolution displays than less sharp emitter tips, numerous methods have been proposed for fabrication of very sharp emitter tips (i.e., emitter tips having tip radii of 100 nanometers or less).
Fabrication of very sharp tips has, however, proved difficult. Accordingly, other methods, besides simply sharpening emitter tips, have been proposed for improving electron emission from emitters. Among such other methods are procedures for treating silicon-comprising emitters to convert the silicon to porous silicon, and procedures for treating silicon-comprising field emitters to coat the emitters with materials having lower work function properties than silicon. Such materials include, for example, diamond, cesium (such as, for example, cesiated carbon) and boronitride (the boronitride can be undoped, or doped with, for example, sulfur).
The above-discussed procedures of treating silicon-comprising emitters show promise for improving emission from individual emitters, as well as for improving uniformity of emission across arrays of emitters. Accordingly, it would be desirable to develop methods of fabricating emitters wherein emitter treatments are incorporated into the emitter fabrication processes.
SUMMARY OF THE INVENTION
In one aspect, the invention encompasses a method of treating the end portions of an array of substantially upright silicon-comprising structures. A substrate having a plurality of substantially upright silicon-comprising structures extending thereover is provided. The substantially upright silicon-comprising structures have base portions, and have end portions above the base portions. A masking layer is formed over the substrate to cover the base portions of the substantially upright silicon-comprising structures while leaving the end portions exposed. While the masking layer covers the base portions, the end portions are exposed to conditions which alter the end portions relative to the base portions.
In another aspect, the invention encompasses a method of treating the ends of an array of silicon-comprising emitter structures. A substrate having a plurality of silicon-comprising emitter structures thereover is provided. The emitter structures have base portions and ends above the base portions. A layer of spin-on-glass is formed over the substrate. The layer of spin-on-glass covers the base portions of the emitter structures and leaves the ends exposed. While the layer of spin-on-glass covers the base portions, the ends are exposed to conditions which alter the ends relative to the base portions.
In yet another aspect, the invention encompasses a cathode assembly which includes a plurality of silicon-comprising emitter structures projecting over a substrate. The emitter structures have base portions and ends above the base portions, and the ends comprise a different material than the base portions.
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Micro)n Technology, Inc.
Niebling John F.
Wells, St. John, Roberts Gregory & Matkin P.S.
Zarneke David A
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