Methods of treating crystal-grown wafers for surface defect anal

Details Methods of treating crystal-grown wafers for surface defect anal Methods of treating crystal-grown wafers for surface defect anal

1997-11-24

1999-11-09

Gorgos, Kathryn

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Coating selected area

205 81, 205120, 205123, 205135, 205157, 205149, 205210, 427140, 427309, 427282, 438928, 438687, C25D 502, C25D 500, C25D 712, B32B 3500

Patent

active

059807202

ABSTRACT:
Methods of treating wafers for analyzing defects present therein comprise providing wafers having front side surfaces comprising defective portions and a back side surfaces opposite thereto; and decorating the defective portion of the front side of the wafer with copper.

REFERENCES:
patent: 5783495 (1998-07-01), Li et al.
Itsumi et al., "Copper Decoration Method to Locate the Defects in Gate Oxide Film", Oyo Butsuri, vol. 65, No. 11, pp. 1164-1165. (Abstract), no month available 1996.
Tuyen, "Study of Surface Treatment Using the Surface Photovoltaic Method", Phys. Halbleiteroberflaeche, vol. 13, pp. 151-155. (Abstract only), no month available 1982.

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