Methods of treating crystal-grown wafers for surface defect anal

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating selected area

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205 81, 205120, 205123, 205135, 205157, 205149, 205210, 427140, 427309, 427282, 438928, 438687, C25D 502, C25D 500, C25D 712, B32B 3500

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059807202

ABSTRACT:
Methods of treating wafers for analyzing defects present therein comprise providing wafers having front side surfaces comprising defective portions and a back side surfaces opposite thereto; and decorating the defective portion of the front side of the wafer with copper.

REFERENCES:
patent: 5783495 (1998-07-01), Li et al.
Itsumi et al., "Copper Decoration Method to Locate the Defects in Gate Oxide Film", Oyo Butsuri, vol. 65, No. 11, pp. 1164-1165. (Abstract), no month available 1996.
Tuyen, "Study of Surface Treatment Using the Surface Photovoltaic Method", Phys. Halbleiteroberflaeche, vol. 13, pp. 151-155. (Abstract only), no month available 1982.

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