Methods of testing fuse elements for memory devices

Details Methods of testing fuse elements for memory devices Methods of testing fuse elements for memory devices

2007-04-02

2010-06-08

Dole, Timothy J (Department: 2831)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S705000, C365S096000, C438S017000

Reexamination Certificate

active

07733096

ABSTRACT:
A method of testing a fuse element for a memory device is provided. A first test probe is electrically connected to a program terminal of the memory device. A second test probe is electrically connected to a ground terminal. The fuse element is on an electrical circuit path between the program terminal and the ground terminal. The first and second test probes are electrically connected to a testing device. A first voltage is applied with the testing device between the program terminal and the ground terminal. At least part of a first current of the first voltage flows across the fuse element. The first voltage and the at least part of the first current that flows across the fuse element is not large enough to change the conductivity state of the fuse element. The first current is measured and used to evaluated the conductive state of the fuse element.

REFERENCES:
patent: 4228528 (1980-10-01), Cenker et al.
patent: 4250570 (1981-02-01), Tsang et al.
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 5694047 (1997-12-01), Goetting et al.
patent: 2005/0188287 (2005-08-01), Combs et al.
patent: 2006/0268485 (2006-11-01), Yanagida
patent: 2006/0268616 (2006-11-01), Knopf et al.
patent: 2007/0053230 (2007-03-01), Kanno

Affiliated with

Also associated with

Rating

Methods of testing fuse elements for memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of testing fuse elements for memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of testing fuse elements for memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4223689