Methods of seamless gap filling

Details Methods of seamless gap filling Methods of seamless gap filling

2010-05-24

2011-10-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

Reexamination Certificate

active

08043884

ABSTRACT:
A method for seamless gap filling is provided, including providing a semiconductor structure with a device layer having a gap therein, wherein the gap has an aspect ratio greater than 4. A liner layer is formed over the device layer exposed by the gap. A first un-doped oxide layer is formed over the liner layer in the gap. A doped oxide layer is formed over the first undoped oxide layer in the gap. A second un-doped oxide layer is formed over the doped oxide layer in the gap to fill the gap. An annealing process is performed on the second un-doped oxide layer, the doped oxide layer, and the first un-doped oxide to form a seamless oxide layer in the gap, wherein the seamless oxide layer has an interior doped region.

REFERENCES:
patent: 2004/0188737 (2004-09-01), Chaudhry et al.
patent: 2005/0282393 (2005-12-01), Cheng et al.
patent: 2008/0102557 (2008-05-01), Kim et al.
patent: 2009/0236691 (2009-09-01), Dyer et al.

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