Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-12-27
2009-06-02
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189090, C365S235000, C365S189040, C365S185330
Reexamination Certificate
active
07542350
ABSTRACT:
Methods for setting a read voltage in a memory system which comprises a flash memory device and a memory controller for controlling the flash memory device, comprise sequentially varying a distribution read voltage to read page data from the flash memory device; constituting a distribution table having a data bit number and a distribution read voltage, the data bit number indicating an erase state among the page data respectively read from the flash memory device and the distribution read voltage corresponding to the read page data; detecting distribution read voltages corresponding to data bit numbers each indicating maximum points of possible cell states of a memory cell, based on the distribution table; and defining new read voltages based on the detected distribution read voltages.
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Kim Ki-Nam
Lee Yeong-Taek
Park Ki-Tae
Le Thong Q
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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