Methods of reducing defect formation on silicon dioxide...

Details Methods of reducing defect formation on silicon dioxide... Methods of reducing defect formation on silicon dioxide...

2008-05-02

2010-12-28

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21241, C257SE21278, C427S255370

Reexamination Certificate

active

07858535

ABSTRACT:
Methods for reducing and inhibiting defect formation on silicon dioxide formed by atomic layer deposition (ALD) are disclosed. Defect reduction is accomplished by performing processing on the silicon dioxide subsequent to deposition by ALD. The post-deposition processing may include at least one of a pump/purge cycle and a water exposure cycle performed after formation of the silicon dioxide on a substrate.

REFERENCES:
patent: 6090442 (2000-07-01), Klaus et al.
patent: 6992019 (2006-01-01), Lee et al.
patent: 7018469 (2006-03-01), Li et al.
patent: 7022184 (2006-04-01), Van Wijck
patent: 7077904 (2006-07-01), Cho et al.
patent: 7101753 (2006-09-01), Kamiyama et al.
patent: 7115528 (2006-10-01), Vaartstra et al.
patent: 2004/0018694 (2004-01-01), Lee et al.
patent: 2004/0219746 (2004-11-01), Vaartstra et al.
patent: 2005/0061234 (2005-03-01), Li et al.
patent: 2006/0040510 (2006-02-01), Lee et al.
patent: 2006/0090694 (2006-05-01), Cho et al.
patent: 2007/0111545 (2007-05-01), Lee et al.
patent: 2008/0113097 (2008-05-01), Mahajani et al.
patent: 2008/0296650 (2008-12-01), Ahn et al.
patent: 2009/0042404 (2009-02-01), Surthi
patent: 2009/0176379 (2009-07-01), Surthi
patent: 2009/0209081 (2009-08-01), Matero et al.
patent: 1383163 (2004-01-01), None
patent: 2004-40110 (2004-02-01), None

Affiliated with

Also associated with

Rating

Methods of reducing defect formation on silicon dioxide... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of reducing defect formation on silicon dioxide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of reducing defect formation on silicon dioxide... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4194756