Methods of protecting a semiconductor device

Details Methods of protecting a semiconductor device Methods of protecting a semiconductor device

1998-02-18

2000-02-29

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

327335, 327380, H01L 2362

Patent

active

06031270&

ABSTRACT:
The present invention includes differential devices and methods of protecting a semiconductor device. One aspect of the present invention provides a differential device adapted to be coupled to a ground connection, the differential device comprising: a first interconnect; a second interconnect; a common diffusion region; a first MOS device coupled with the common diffusion region and the first interconnect; a second MOS device coupled with the common diffusion region and the second interconnect; and a tail MOS device coupled with the common diffusion region and adapted to be coupled to a ground connection.

REFERENCES:
patent: 5519242 (1996-05-01), Avery
Linewidth Control Effects on MOSFET ESD Robustness, S. Voldman, J. Never, S. Holmes, and J. Adkisson, p. 2.7.1-2.7.9, EOS/ESD Symposium 96-101.
ESD Protection In A Mixed-Voltage Interface and Multi-Rail Disconnection Power Grid Environment In 0.50 and 0.25-.mu.m Channel Length CMOS Technologies, Steven H. Voldman, p. 3.4.1-3.4.10, EOS/ESD Symposium 94-125 .

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