Methods of programming non-volatile memory devices including...

Details Methods of programming non-volatile memory devices including... Methods of programming non-volatile memory devices including...

2007-11-06

2007-11-06

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S100000, C365S148000

Reexamination Certificate

active

11282136

ABSTRACT:
A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to reduce a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed.

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