Methods of preventing oxidation of barrier metal of...

Details Methods of preventing oxidation of barrier metal of... Methods of preventing oxidation of barrier metal of...

2005-11-08

2005-11-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000

Reexamination Certificate

active

06962877

ABSTRACT:
A method for preventing oxidation of a barrier metal layer of a semiconductor device is disclosed. The method includes the following steps. Ti/Ti(1-x)AlxN is deposited on the bottom and sidewalls of a via hole in a substrate by a plasma chemical vapor deposition to form a first barrier metal layer. The via hole is filled with a plug material and a planarization process is performed to form a via plug. A second barrier metal layer and a metal line are deposited in sequence on the substrate including the via plug. Then, Ti/Ti(1-x)AlxN as an ARC layer is deposited on the metal line by a plasma chemical vapor deposition. Accordingly, the present invention can improve device reliability by controlling continuous oxidation of the barrier metal layer using Ti/Ti(1-x)AlxN formed by addition of aluminum to TiN.

REFERENCES:
patent: 6133142 (2000-10-01), Tran et al.
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patent: 6518668 (2003-02-01), Cohen
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patent: 6812146 (2004-11-01), Akram
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