Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-10-17
2006-10-17
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257S438000, C257SE21023, C430S005000
Reexamination Certificate
active
07122453
ABSTRACT:
The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and through a subresolution assist feature that is transmissive of at least a portion of the radiation. The subresolution assist feature alters a pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the subresolution assist feature. The invention further includes methods of forming radiation-patterning tools, and the radiation-patterning tools themselves.
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Chen, Fung J. et al., “Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars” Received May 28, 1998; accepted Jul. 9, 1997; J. Vac. Sci. Technol. B 15(6) Nov./Dec. 1997.
Coleman W. David
Micro)n Technology, Inc.
Wells St. John P.S.
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