Methods of patterning a semiconductor wafer having an active reg

Details Methods of patterning a semiconductor wafer having an active reg Methods of patterning a semiconductor wafer having an active reg

1996-06-06

1999-03-23

Nguyen, Nam

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

430313, 430328, G03C 500

Patent

active

058857567

ABSTRACT:
A semiconductor wafer having an active region where the active semiconductor devices are formed and a peripheral region between the active region and the wafer edge, is patterned by forming a patterned photoresist layer on the active region, such that the peripheral region is free of photoresist thereon. The patterned photoresist layer may be formed by forming a photoresist layer on the active region and on the peripheral region of the semiconductor wafer and removing the photoresist layer from the peripheral region of the semiconductor wafer. The photoresist in the active region is patterned. By removing the photoresist layer in the peripheral region of the wafer, excess etchant accumulation at the boundary of the active region and peripheral region is prevented, thereby reducing or preventing pitting of an underlying layer at the boundary.

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