Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-05-20
2008-05-20
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S295000, C257SE27104
Reexamination Certificate
active
10870756
ABSTRACT:
Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof. At least the top magnetic material layer of a magnetic stack is patterned using a hard mask, and a conformal insulating material is deposited over the patterned top magnetic material layer and hard mask. The conformal insulating material is anisotropically etched to remove the conformal insulating material over vertical sidewalls of at least the patterned top magnetic material layer and the hard mask. The remaining conformal insulating material comprises a sidewall spacer hard mask that is used as a mask to pattern the remaining material layers of the magnetic stack. The sidewall spacer hard mask may be left remaining in the magnetic memory cell structure.
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Costrini Gregory
Kanakasabapathy Sivananda K.
Kasko Ihar
Diaz José R
Jackson Jerome
Slater & Matsil L.L.P.
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