Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2010-11-30
2011-10-25
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185200, C365S185260, C365S185230, C365S185290
Reexamination Certificate
active
08045385
ABSTRACT:
Methods of operating a charge trap nonvolatile memory device include operations to erase a first string of nonvolatile memory cells by selectively erasing even-numbered nonvolatile memory cells in the first string and then selectively erasing the odd-numbered nonvolatile memory cells in the first string, which may be interleaved with the even-numbered nonvolatile memory cells. This operation to selectively erase the even-numbered nonvolatile memory cells may include erasing the even-numbered nonvolatile memory cells while simultaneously biasing the odd-numbered nonvolatile memory cells in a blocking condition that inhibits erasure of the odd-numbered nonvolatile memory cells. The operation to selectively erase the odd-numbered nonvolatile memory cells may include erasing the odd-numbered nonvolatile memory cells while simultaneously biasing the even-numbered nonvolatile memory cells in a blocking condition that inhibits erasure of the even-numbered nonvolatile memory cells.
REFERENCES:
patent: 5473563 (1995-12-01), Suh et al.
patent: 6858899 (2005-02-01), Mahajani et al.
patent: 6881626 (2005-04-01), Lee et al.
patent: 6958936 (2005-10-01), Quader et al.
patent: 6995424 (2006-02-01), Lee
patent: 7042770 (2006-05-01), Lee et al.
patent: 7187590 (2007-03-01), Zous et al.
patent: 7253467 (2007-08-01), Lee et al.
patent: 2003/0198101 (2003-10-01), Pio
patent: 2004/0125629 (2004-07-01), Scheuerlein et al.
patent: 2006/0180851 (2006-08-01), Lee et al.
patent: 2007/0205445 (2007-09-01), Park et al.
patent: 2008/0007999 (2008-01-01), Park et al.
patent: 2008/0159009 (2008-07-01), Aritome
patent: 2008/0165585 (2008-07-01), Surico et al.
patent: 2008/0239822 (2008-10-01), Kosaki et al.
patent: 1020050077203 (2005-08-01), None
patent: 1020060119988 (2006-11-01), None
Choi Jung-Dal
Lee Chang-Hyun
Lim Young-Ho
Suh Kang-Deog
Le Thong Q
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
LandOfFree
Methods of operating nonvolatile memory devices to inhibit... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of operating nonvolatile memory devices to inhibit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of operating nonvolatile memory devices to inhibit... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4291688