Methods of operating magnetic random access memory devices...

Details Methods of operating magnetic random access memory devices... Methods of operating magnetic random access memory devices...

2007-12-11

2007-12-11

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S133000, C365S225500

Reexamination Certificate

active

11177641

ABSTRACT:
A magnetic random access memory device may include a memory cell access transistor on a substrate, a bit line spaced apart from the substrate, and a magnetic tunnel junction structure electrically coupled between the bit line and the memory cell access transistor. At least one magnet may be positioned adjacent a sidewall of the magnetic tunnel junction structure and may be configured to provide a magnetic field through the magnetic tunnel junction structure. Related methods of operating magnetic random access memory devices are also discussed.

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Office Action corresponding to Korean Application No. 10-2004-0084584 dated Jan. 26, 2006.

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