Methods of operating magnetic random access memory device...

Details Methods of operating magnetic random access memory device... Methods of operating magnetic random access memory device...

2007-01-16

2007-01-16

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11201495

ABSTRACT:
Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.

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