Methods of manufacturing trench isolation structures using...

Details Methods of manufacturing trench isolation structures using... Methods of manufacturing trench isolation structures using...

2008-06-06

2010-10-05

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

C438S424000, C257SE21546

Reexamination Certificate

active

07807543

ABSTRACT:
A semiconductor device is manufactured by forming trenches in a substrate and selectively performing Plasma Ion Immersion Implantation and Deposition (PIIID) on a subset of the trenches in the substrate. The PIIID may be performed on only a portion of a surface of at least one of the trenches in the substrate. Semiconductor devices can include a semiconductor substrate having first, second and third trenches therein, and an oxide liner layer that fully lines the first trenches, that does not line the second trenches and that partially lines the third trenches.

REFERENCES:
patent: 6486039 (2002-11-01), Yoo et al.
patent: 2002/0070430 (2002-06-01), Oh et al.
patent: 2001-15618 (2001-01-01), None
patent: 10-0378190 (2003-03-01), None
patent: 10-0479813 (2005-01-01), None
Volz and Ensinger, “Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation,” Surface and Coating Technology 156, 2002, pp. 237-243.

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