Methods of manufacturing thin film transistors and liquid crysta

Details Methods of manufacturing thin film transistors and liquid crysta Methods of manufacturing thin film transistors and liquid crysta

1998-02-02

1999-12-07

Niebling, John F.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438158, 438159, H01L 2100

Patent

active

059982292

ABSTRACT:
Plasma treatment is performed on an exposed portion of an undoped amorphous silicon layer in a thin film transistor, after etching source/drain contacts and a doped amorphous silicon layer. The plasma treatment can repair damage caused during the etching. The plasma treatment is preferably a hydrogen plasma treatment, and more preferably a helium plasma treatment. These treatments are particularly useful in repairing damage when the source/drain electrodes comprise molybdenum or molybdenum/tungsten alloy, and etching is performed by dry etching the doped amorphous silicon layer using CF.sub.4 and HCl gases.

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patent: 5874326 (1999-02-01), Lyu
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