Methods of manufacturing semiconductor structures using RIE...

Details Methods of manufacturing semiconductor structures using RIE... Methods of manufacturing semiconductor structures using RIE...

2007-01-10

2008-10-28

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S729000, C438S742000, C438S744000

Reexamination Certificate

active

07442650

ABSTRACT:
A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a source radio frequency and anisotropic etch performance is induced by a second bias radio frequency.

REFERENCES:
patent: 4820393 (1989-04-01), Brat et al.
patent: 6100183 (2000-08-01), Lu et al.
patent: 6183655 (2001-02-01), Wang et al.
patent: 6531404 (2003-03-01), Nallan et al.
patent: 6699789 (2004-03-01), Yang et al.
patent: 6905800 (2005-06-01), Yuen et al.
patent: 2002/0142573 (2002-10-01), Yang et al.
patent: 2004/0063328 (2004-04-01), Wen et al.
patent: 2005/0014383 (2005-01-01), Ji et al.
patent: 63303062 (1987-06-01), None
patent: 63303066 (1988-05-01), None
patent: 5295534 (1992-04-01), None
patent: 6212417 (1992-04-01), None
patent: 6212418 (1992-04-01), None
patent: 6228747 (1993-02-01), None
patent: 0383462 (2000-03-01), None
patent: 0589390 (2004-06-01), None
patent: 0231962 (2005-05-01), None
patent: WO 0213241 (2002-02-01), None

Affiliated with

Also associated with

Rating

Methods of manufacturing semiconductor structures using RIE... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of manufacturing semiconductor structures using RIE..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of manufacturing semiconductor structures using RIE... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4003690