Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-01-11
2011-01-11
Nguyen, Cuong Q (Department: 2811)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S708000
Reexamination Certificate
active
07867912
ABSTRACT:
A method of manufacturing semiconductor structures is disclosed. In one embodiment, a first mask is provided above a substrate. The first mask includes first mask lines extending along a first axis. A second mask is provided above the first mask. The second mask includes second mask lines extending along a second axis that intersects the first axis. At least one of the first and second masks is formed by a pitch fragmentation method. Structures may be formed in the substrate, wherein the first and the second mask are effective as a combined mask. The structures may be equally spaced at a pitch in the range of a minimum lithographic feature size for repetitive line structures.
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Caspary Dirk
Nölscher Christoph
Parascandola Stefano
Scholz Arnd
Dicke Billig & Czaja, PLLC
Nguyen Cuong Q
Qimonda AG
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