Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-23
2008-11-11
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S198000, C438S199000, C438S166000, C438S178000, C257SE29004
Reexamination Certificate
active
07449374
ABSTRACT:
Integrated circuits are oriented on a substrate at an angle that is rotated between 5 to 40 degrees from a direction parallel or perpendicular to a preferred crystalline plane direction, such as the cleavage plane, of the substrate. Parameters such as stress and mobility of transistors may be optimized by adjusting the angle of rotation of the substrate. For a rotated substrate CMOS device design, other stress control measures may be used, such as a stress control or tensile liner, over an NMOS transistor, PMOS transistor, or both, to further adjust the stress and improve performance.
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Eller Manfred
Greene Brian J.
Hierlemann Matthias
Sung Chun-Yung
Infineon - Technologies AG
Internatioanl Business Machines Corporation
Slater & Matsil L.L.P.
Tran Long K
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