Methods of manufacturing semiconductor devices having...

Details Methods of manufacturing semiconductor devices having... Methods of manufacturing semiconductor devices having...

2005-06-07

2005-06-07

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S621000, C438S006000, C438S201000, C438S629000, C438S637000, C257S503000

Reexamination Certificate

active

06902998

ABSTRACT:
A semiconductor device is manufactured by forming a first insulating layer on a semiconductor substrate. First contact pads and second contact pads are formed that penetrate through the first insulating layer and are electrically connected to the semiconductor substrate. A second insulating layer is formed that has guide contact holes that expose upper surfaces of the first contact pads. An etch stopper is formed on bottoms and sidewalls of the guide contact holes of the second insulating layer. Bit lines are formed that are electrically connected to the semiconductor substrate by the second contact pads. The bit lines are electrically isolated from the first contact pads.

REFERENCES:
patent: 6649508 (2003-11-01), Park et al.
patent: 2001-57666 (2001-07-01), None
patent: 2002-34468 (2002-05-01), None
Notice to Submit a Response, Korean Application No. 10-2002-0063025, Sep. 23, 2004.

Affiliated with

Also associated with

Rating

Methods of manufacturing semiconductor devices having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of manufacturing semiconductor devices having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of manufacturing semiconductor devices having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3480339