Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

2006-07-11

2006-07-11

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S631000, C438S694000

Reexamination Certificate

active

07074702

ABSTRACT:
Disclosed are methods of manufacturing semiconductor devices, which may solve problems such as a short of upper wiring, etc., which are caused by a metal residue generated during chemical mechanical polishing of metallization of the semiconductor device, by depositing a predetermined insulating layer on the metal residue. The method may include forming a first insulating layer having an opening on a semiconductor substrate, depositing a metal layer on the first insulating layer to sufficiently fill the opening, planarizing the metal layer to expose the first insulating layer, forming a second insulating layer on the exposed first insulating layer and the metal layer, selectively etching and removing the second insulating layer to expose the metal layer, and forming a metallization layer on the metal layer.

REFERENCES:
patent: 5896870 (1999-04-01), Huynh et al.
patent: 5922620 (1999-07-01), Shimomura et al.
patent: 6117766 (2000-09-01), Yoon et al.
patent: 6133139 (2000-10-01), Dalal et al.
patent: 6149830 (2000-11-01), Lin et al.
patent: 6383935 (2002-05-01), Lin et al.
patent: 6645846 (2003-11-01), Drynan et al.

Affiliated with

Also associated with

Rating

Methods of manufacturing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of manufacturing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of manufacturing semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3524371