Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

2006-01-03

2008-12-02

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S643000, C438S645000, C257SE21002

Reexamination Certificate

active

07459394

ABSTRACT:
Methods of manufacturing semiconductors are disclosed. One example method includes forming a trench through a dual damascene process, depositing a barrier metal layer on the overall surface, and depositing copper in the trench to form a copper line. The example method may also include performing a wet etching process to remove the top portion of the copper line, depositing a barrier layer on the etched copper line, and performing a planarization process to flatten the barrier layer.

REFERENCES:
patent: 6251786 (2001-06-01), Zhou et al.
patent: 6537913 (2003-03-01), Modak
patent: 6670274 (2003-12-01), Liu et al.
patent: 6730594 (2004-05-01), Noguchi et al.

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