Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

2007-07-17

2007-07-17

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C438S509000, C438S655000, C438S656000, C438S682000

Reexamination Certificate

active

11026954

ABSTRACT:
Methods for manufacturing semiconductor devices are disclosed. In one example, the semiconductor device has a gate and source/drain regions formed on a substrate. One example method includes introducing transition metal (Ti) source or precursor so that the introduced Ti source is chemisorbed onto the surface of the substrate and Ti mono-layer is formed; introducing semiconductor (Si) source so that the introduced Si source is chemisorbed onto the Ti mono-layer and Si mono-layer is formed; repeating the forming of the Ti and Si mono-layers; annealing the substrate to form a silicide layer (TiSi2) of C-54 phase; and patterning the C-54 phase TiSi2layer to remain on the upper surfaces of the gate and source/drain regions.

REFERENCES:
patent: 5841173 (1998-11-01), Yamashita
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 6984591 (2006-01-01), Buchanan et al.
patent: 2002/0115289 (2002-08-01), Wu
patent: 2004/0180543 (2004-09-01), Lee et al.

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