Methods of manufacturing reference sample substrates for...

Details Methods of manufacturing reference sample substrates for... Methods of manufacturing reference sample substrates for...

2006-12-27

2010-10-12

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

C438S016000, C438S780000, C257SE21521

Reexamination Certificate

active

07811836

ABSTRACT:
A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.

REFERENCES:
patent: 2006/0249713 (2006-11-01), Peterson et al.
patent: 02156636 (1990-06-01), None
patent: 06249764 (1994-09-01), None
patent: 11132972 (1999-05-01), None
patent: 2002184828 (2002-06-01), None
patent: 100388784 (2003-06-01), None
English Abstract for Publication No. 02-156636.
English Abstract for Publication No. 06-249764.
English Abstract for Publication No. 11-132972.
English Abstract for Publication No. 2002-184828.
English Abstract for Publication No. 10-0388784.

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