Methods of manufacturing phase-changeable memory devices...

Details Methods of manufacturing phase-changeable memory devices... Methods of manufacturing phase-changeable memory devices...

2011-08-02

2011-08-02

Valentine, Jami M (Department: 2894)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C257S002000, C257S003000, C257S004000, C257S005000, C257SE29002, C438S103000, C365S163000

Reexamination Certificate

active

07989259

ABSTRACT:
A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface portion and is in electrical contact with the contact region of the substrate. A phase-changeable material layer pattern is on the lower electrode, and an upper electrode is on the phase-changeable material layer pattern. The insulating interlayer may have a nitrided surface portion and the phase-changeable material layer may be at least partially on the nitrided surface portion of the insulating interlayer. Methods of forming phase-changeable memory devices are also disclosed.

REFERENCES:
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Notice to Submit a Response for Korean Patent Application No. 10-2004-0064712 mailed Mar. 16, 2006.

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