Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-22
2005-02-22
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S003000, C438S048000, C438S057000, C438S240000, C438S381000, C438S384000, C438S761000
Reexamination Certificate
active
06858905
ABSTRACT:
Low cross talk resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises a bit formed using a perovskite material interposed at a cross point of an upper electrode and lower electrode. Each bit has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit, decrease the resistivity of the bit, or determine the resistivity of the bit. Memory circuits are provided to aid in the programming and read out of the bit region.
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Hsu Sheng Teng
Zhuang Wei-Wei
Curtin Joesph P.
Huynh Andy
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
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