Methods of manufacturing integrated circuit devices having...

Details Methods of manufacturing integrated circuit devices having... Methods of manufacturing integrated circuit devices having...

2007-11-27

2007-11-27

Luu, Chuong A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Formation of semi-insulative polycrystalline silicon

C438S595000, C438S782000, C438S257000

Reexamination Certificate

active

10008700

ABSTRACT:
An integrated circuit device is manufactured by forming an insulating layer on a substrate. A capping layer is formed on the insulating layer and both the capping layer and the insulating layer are patterned. Insulating spacers are formed on sidewalls of the insulating layer so that the insulating spacers, the capping layer, and the substrate enclose the insulating layer.

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patent: 6548357 (2003-04-01), Weybright et al.
patent: 6815762 (2004-11-01), Yoshida et al.

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