Methods of manufacturing integrated circuit devices having...

Details Methods of manufacturing integrated circuit devices having... Methods of manufacturing integrated circuit devices having...

2006-03-07

2006-03-07

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S371000, C257S372000

Reexamination Certificate

active

07009257

ABSTRACT:
An integrated circuit device includes a substrate that has a source region and a drain region formed therein. A gate pattern is disposed on the substrate between the source region and the drain region. A lower pad layer is disposed on the source region and/or the drain region and comprises a same crystalline structure as the substrate. A conductive layer is disposed on the lower pad layer such that at least a portion of the conductive layer is disposed between the lower pad layer and the gate pattern. An insulating layer is disposed between the gate pattern and both the lower pad layer and the conductive layer, and also between the conductive layer and the substrate.

REFERENCES:
patent: 5702986 (1997-12-01), Matthews et al.
patent: 5716861 (1998-02-01), Moslehi
patent: 6017823 (2000-01-01), Shishiguchi et al.
patent: 6329225 (2001-12-01), Rodder
patent: 6365451 (2002-04-01), Havemann
patent: 3292739 (1991-12-01), None
patent: 7183486 (1995-07-01), None

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