Methods of manufacturing image sensors

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S200000, C257SE21352

Reexamination Certificate

active

07972890

ABSTRACT:
Example embodiments may provide methods of manufacturing an image sensor. Example methods of manufacturing an image sensor may include forming a photoelectric converter in a semiconductor substrate, forming an interlayer insulating film covering a surface of the semiconductor substrate, forming metal wires and an inter-metal insulating film filling between the metal wires on the interlayer insulating film, forming openings above the photoelectric converter by removing a part of the inter-metal insulating film and the interlayer insulating film, curing the surface above the photoelectric converter by irradiating light into the openings, and/or forming a light transmitter filling the openings.

REFERENCES:
patent: 2006/0054946 (2006-03-01), Baek et al.
patent: 2007/0284687 (2007-12-01), Rantala
patent: 2001-320079 (2001-11-01), None
patent: 101998072450 (1998-11-01), None
patent: 1020040007940 (2004-01-01), None
patent: 10-2004-0106229 (2004-12-01), None
patent: 10-2005-0069657 (2005-07-01), None
patent: 10-2006-0077071 (2006-07-01), None
Korean Office Action dated Aug. 29, 2007.

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