Methods of manufacturing CMOS image sensors

Details Methods of manufacturing CMOS image sensors Methods of manufacturing CMOS image sensors

2011-04-26

2011-04-26

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C438S200000, C257SE21632

Reexamination Certificate

active

07932120

ABSTRACT:
Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.

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