Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2007-01-09
2009-10-20
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C438S455000, C257SE23080
Reexamination Certificate
active
07605022
ABSTRACT:
A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.
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Bae Dae-Lok
Cha Yong-Won
Suh Dong-Chul
Fan Michele
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Smith Matthew
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